Comparative Analysis of PBTI Induced Device Degradation in Junctionless and Inversion Mode Multiple-Gate MOSFET

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چکیده

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ژورنال

عنوان ژورنال: The Journal of the Korean Institute of Information and Communication Engineering

سال: 2013

ISSN: 2234-4772

DOI: 10.6109/jkiice.2013.17.1.151